NJVMJB45H11T4G
onsemi
onsemi
TRANS PNP 80V 10A D2PAK
$1.63
Available to order
Reference Price (USD)
800+
$0.92768
1,600+
$0.73238
2,400+
$0.68355
5,600+
$0.65100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the NJVMJB45H11T4G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NJVMJB45H11T4G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 2 W
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
Related Products
Infineon Technologies
BC848BL3E6327XTMA1
Panjit International Inc.
2SB1429_R1_00001
onsemi
MMBT2907AM3T5G
Diodes Incorporated
DZTA42-13
Renesas Electronics America Inc
2SA1122CDTR-E
Fairchild Semiconductor
MMBT5401-FS
Panjit International Inc.
BC847A_R1_00001
NTE Electronics, Inc
NTE2311
NXP USA Inc.
BC846BW/DG/B3115
NXP Semiconductors