NJVMJD253T4G-VF01
onsemi
onsemi
TRANS PNP 100V 4A DPAK
$0.60
Available to order
Reference Price (USD)
2,500+
$0.31820
5,000+
$0.29626
12,500+
$0.29260
Exquisite packaging
Discount
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The NJVMJD253T4G-VF01 Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NJVMJD253T4G-VF01 provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
- Power - Max: 12.5 W
- Frequency - Transition: 40MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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