NJW4832KH1-B-TE3
Nisshinbo Micro Devices Inc.
Nisshinbo Micro Devices Inc.
1-CHANNEL HIGH SIDE SWITCH
$0.68
Available to order
Reference Price (USD)
1+
$0.67980
500+
$0.673002
1000+
$0.666204
1500+
$0.659406
2000+
$0.652608
2500+
$0.64581
Exquisite packaging
Discount
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Nisshinbo Micro Devices Inc.'s NJW4832KH1-B-TE3 represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the NJW4832KH1-B-TE3 driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: P-Channel MOSFET
- Voltage - Supply: 4.6V ~ 40V
- Logic Voltage - VIL, VIH: 0.9V, 2.64V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10µs, 10µs
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: 6-DFN (1.6x1.6)
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