NP160N055TUJ-E1-AY
Renesas
Renesas
NP160N055TUJ-E1-AY - SWITCHINGN-
$2.61
Available to order
Reference Price (USD)
1+
$2.61044
500+
$2.5843356
1000+
$2.5582312
1500+
$2.5321268
2000+
$2.5060224
2500+
$2.479918
Exquisite packaging
Discount
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Optimize your power electronics with the NP160N055TUJ-E1-AY single MOSFET from Renesas. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NP160N055TUJ-E1-AY combines cutting-edge technology with Renesas's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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