NP20P06YLG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 20A 8HSON
$0.66
Available to order
Reference Price (USD)
1+
$0.66466
500+
$0.6580134
1000+
$0.6513668
1500+
$0.6447202
2000+
$0.6380736
2500+
$0.631427
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NP20P06YLG-E1-AY by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2407 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 57W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
Related Products
Nexperia USA Inc.
PMN15ENEX
Diodes Incorporated
DMTH10H010SPS-13
Renesas
UPA2702TP-E2-AZ
Harris Corporation
IRF9541
Nexperia USA Inc.
ON5278/C4127
onsemi
FDA16N50LDTU
Goford Semiconductor
GT1003D
Diodes Incorporated
DMTH4007SPS-13
onsemi
NDCTR20120A
onsemi