NP29N06QDK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / MOSFET
$1.95
Available to order
Reference Price (USD)
1+
$1.95000
500+
$1.9305
1000+
$1.911
1500+
$1.8915
2000+
$1.872
2500+
$1.8525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NP29N06QDK-E1-AY by Renesas Electronics America Inc is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the NP29N06QDK-E1-AY offers superior functionality and longevity. Trust Renesas Electronics America Inc to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
- Power - Max: 1W (Ta), 44W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-HSON (5x5.4)
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