NP32N055SHE-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 32A TO252
$0.82
Available to order
Reference Price (USD)
1+
$0.82000
500+
$0.8118
1000+
$0.8036
1500+
$0.7954
2000+
$0.7872
2500+
$0.779
Exquisite packaging
Discount
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Optimize your power electronics with the NP32N055SHE-E1-AY single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NP32N055SHE-E1-AY combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 25mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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