NP35N055YUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 35A 8HSON
$0.75
Available to order
Reference Price (USD)
1+
$0.74649
500+
$0.7390251
1000+
$0.7315602
1500+
$0.7240953
2000+
$0.7166304
2500+
$0.7091655
Exquisite packaging
Discount
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Enhance your electronic projects with the NP35N055YUK-E1-AY single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's NP35N055YUK-E1-AY for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 97W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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