NP40N10PDF-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 40A TO263
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NP40N10PDF-E1-AY from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NP40N10PDF-E1-AY offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FQPF6N25
Infineon Technologies
IRFR5505GTRPBF
Alpha & Omega Semiconductor Inc.
AOWF2606
Rohm Semiconductor
RSE002N06TL
Infineon Technologies
IRF3315
Infineon Technologies
IRF7811AVTRPBF
Infineon Technologies
IPW60R099C7
Alpha & Omega Semiconductor Inc.
AOD4102
Vishay Siliconix
SI3454CDV-T1-E3
Infineon Technologies