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NP60N04NUK-S18-AY

Renesas Electronics America Inc
NP60N04NUK-S18-AY Preview
Renesas Electronics America Inc
MOSFET N-CH 40V 60A TO262-3
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Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Full Pack, I²Pak

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