NP75N04YLG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / MOSFET
$1.91
Available to order
Reference Price (USD)
1+
$1.91000
500+
$1.8909
1000+
$1.8718
1500+
$1.8527
2000+
$1.8336
2500+
$1.8145
Exquisite packaging
Discount
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The NP75N04YLG-E1-AY from Renesas Electronics America Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Renesas Electronics America Inc's NP75N04YLG-E1-AY for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 138W (Ta)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON (5x5.4)
- Package / Case: 8-PowerLDFN
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