NP80N06MLG-S18-AY
Renesas
Renesas
NP80N06MLG-S18-AY - SWITCHINGN-C
$1.84
Available to order
Reference Price (USD)
1+
$1.84080
500+
$1.822392
1000+
$1.803984
1500+
$1.785576
2000+
$1.767168
2500+
$1.74876
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NP80N06MLG-S18-AY from Renesas redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NP80N06MLG-S18-AY offers the precision and reliability you need. Trust Renesas to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: MP-25K
- Package / Case: TO-220-3
Related Products
Harris Corporation
RFP2N12
Infineon Technologies
IPL60R060CFD7AUMA1
Fairchild Semiconductor
NDP4050
IXYS
IXFA36N55X2
Diodes Incorporated
DMN24H3D6S-7
Diodes Incorporated
DMNH6008SPS-13
Vishay Siliconix
IRFR9024PBF-BE3
Vishay Siliconix
SIA465EDJ-T1-GE3
Nexperia USA Inc.
PMN40XPEAAX
Renesas Electronics America Inc