NP89N055PUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 90A TO263-3
$2.34
Available to order
Reference Price (USD)
1+
$2.34000
500+
$2.3166
1000+
$2.2932
1500+
$2.2698
2000+
$2.2464
2500+
$2.223
Exquisite packaging
Discount
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Meet the NP89N055PUK-E1-AY by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NP89N055PUK-E1-AY stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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