NSB1706DMW5T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SC70
$0.36
Available to order
Reference Price (USD)
3,000+
$0.05192
6,000+
$0.04515
15,000+
$0.03838
30,000+
$0.03612
75,000+
$0.03386
150,000+
$0.03010
Exquisite packaging
Discount
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Introducing onsemi's NSB1706DMW5T1G, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. onsemi's dedication to excellence ensures that the NSB1706DMW5T1G meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-88A (SC-70-5/SOT-353)
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