NSBA115TF3T5G
onsemi
onsemi
TRANS PREBIAS PNP 50V SOT1123
$0.04
Available to order
Reference Price (USD)
8,000+
$0.10305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NSBA115TF3T5G onsemi's answer to modern circuit design challenges. This pre-biased bipolar transistor combines 2N3904 compatibility with enhanced thermal characteristics. Key applications include: Electric vehicle charging stations Industrial IoT gateways Smart meter modules With 100% automated production testing, each unit delivers military-grade reliability for critical infrastructure projects.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 254 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
Related Products
Rohm Semiconductor
DTA124XEFRATL
Toshiba Semiconductor and Storage
RN1109,LF(CT
Toshiba Semiconductor and Storage
RN2111ACT(TPL3)
onsemi
DTC115EET1G
Toshiba Semiconductor and Storage
RN1405,LXHF
Diodes Incorporated
DDTA143ZE-7
Toshiba Semiconductor and Storage
RN1107MFV,L3XHF(CT
Nexperia USA Inc.
PDTA114EQBZ
onsemi
DTA115TET1G
Rohm Semiconductor