NSM21356DW6T1G
onsemi
onsemi
TRANS NPN PREBIAS/PNP SOT363
$0.02
Available to order
Reference Price (USD)
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$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
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Upgrade your electronic designs with the NSM21356DW6T1G by onsemi, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the NSM21356DW6T1G excels in automotive systems, power management modules, and communication devices. onsemi's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose NSM21356DW6T1G for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 65V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 220 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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