NSS12500UW3T2G
onsemi
onsemi
TRANS PNP 12V 5A 3WDFN
$0.97
Available to order
Reference Price (USD)
3,000+
$0.20588
6,000+
$0.19260
15,000+
$0.17931
30,000+
$0.17710
Exquisite packaging
Discount
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Enhance your circuit designs with the NSS12500UW3T2G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NSS12500UW3T2G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 875 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-WDFN Exposed Pad
- Supplier Device Package: 3-WDFN (2x2)
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