NSS40300MDR2G
onsemi
onsemi
TRANS 2PNP 40V 3A 8SOIC
$1.04
Available to order
Reference Price (USD)
2,500+
$0.35475
5,000+
$0.33165
12,500+
$0.32780
Exquisite packaging
Discount
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Meet the NSS40300MDR2G onsemi s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the NSS40300MDR2G demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 653mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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onsemi