NSVEMD4DXV6T5G
onsemi
onsemi
TRANS NPN/PNP DUAL BRT SOT563
$0.11
Available to order
Reference Price (USD)
8,000+
$0.10742
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the versatility of onsemi's NSVEMD4DXV6T5G, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The NSVEMD4DXV6T5G is widely used in IoT devices, medical equipment, and renewable energy systems. onsemi's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the NSVEMD4DXV6T5G offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms, 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN2904FE,LF
Toshiba Semiconductor and Storage
RN2504(TE85L,F)
Toshiba Semiconductor and Storage
RN4988FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4902FE,LF(CT
Diodes Incorporated
DDC143TU-7-F
Nexperia USA Inc.
PUMD19,115
Rohm Semiconductor
EMB59T2R
Nexperia USA Inc.
PBLS6022D,115
NXP USA Inc.
PBLS2001S,115
NXP USA Inc.