NSVMMBT2907AWT1G
onsemi
onsemi
TRANS PNP 60V 0.6A SC70-3
$0.40
Available to order
Reference Price (USD)
3,000+
$0.07392
6,000+
$0.06653
15,000+
$0.05914
30,000+
$0.05544
75,000+
$0.04928
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NSVMMBT2907AWT1G Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NSVMMBT2907AWT1G is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 150 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
Related Products
onsemi
NSS30100LT1G
Diodes Incorporated
ZXTN19020DZQTA
Central Semiconductor Corp
2N3716 PBFREE
onsemi
BC847BLT3G
NXP USA Inc.
PMBT3906/DG215
onsemi
PN2907ABU
Yangzhou Yangjie Electronic Technology Co.,Ltd
BC847C-F2-0000HF
Nexperia USA Inc.
BC817K-25HVL
Microsemi Corporation
JAN2N2221AL
Nexperia USA Inc.