NSVMMUN2132LT1G-M01
onsemi
onsemi
MMUN2132L - NSVMMUN2132 - DIGITA
$0.03
Available to order
Reference Price (USD)
1+
$0.03078
500+
$0.0304722
1000+
$0.0301644
1500+
$0.0298566
2000+
$0.0295488
2500+
$0.029241
Exquisite packaging
Discount
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For designers seeking plug-and-play transistor solutions, NSVMMUN2132LT1G-M01 offers unmatched convenience. onsemi's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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