NSVT1602CLTWG
onsemi
onsemi
160V 1.5A NPN LOW SATURATION BJT
$0.27
Available to order
Reference Price (USD)
1+
$0.27051
500+
$0.2678049
1000+
$0.2650998
1500+
$0.2623947
2000+
$0.2596896
2500+
$0.2569845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the NSVT1602CLTWG Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NSVT1602CLTWG delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 800 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: 8-LFPAK
Related Products
Microchip Technology
JANTXV2N3440UA/TR
Solid State Inc.
D44T5
Microchip Technology
2C3741-MSCL
Harris Corporation
BFT19B
Microchip Technology
JANSP2N5153
Microchip Technology
JANSD2N3499
Microchip Technology
JANTXV2N3019P
Renesas Electronics America Inc
2SC5435-T1-A
Microchip Technology
2N1716S
Microchip Technology