NTB011N15MC
onsemi
onsemi
NTB011N15MC
$4.71
Available to order
Reference Price (USD)
1+
$4.71000
500+
$4.6629
1000+
$4.6158
1500+
$4.5687
2000+
$4.5216
2500+
$4.4745
Exquisite packaging
Discount
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Enhance your electronic projects with the NTB011N15MC single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTB011N15MC for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 223µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK-3 (TO-263-3)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB