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NTB011N15MC

onsemi
NTB011N15MC Preview
onsemi
NTB011N15MC
$4.71
Available to order
Reference Price (USD)
1+
$4.71000
500+
$4.6629
1000+
$4.6158
1500+
$4.5687
2000+
$4.5216
2500+
$4.4745
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 223µA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK-3 (TO-263-3)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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