NTBGS3D5N06C
onsemi
onsemi
POWER MOSFET, 60 V, 3.7 M?, 127A
$4.44
Available to order
Reference Price (USD)
1+
$4.44000
500+
$4.3956
1000+
$4.3512
1500+
$4.3068
2000+
$4.2624
2500+
$4.218
Exquisite packaging
Discount
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Meet the NTBGS3D5N06C by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTBGS3D5N06C stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V
- Vgs(th) (Max) @ Id: 4V @ 122µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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