NTE16004
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 75V 2A TO39
$1.90
Available to order
Reference Price (USD)
1+
$1.90000
500+
$1.881
1000+
$1.862
1500+
$1.843
2000+
$1.824
2500+
$1.805
Exquisite packaging
Discount
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Experience unmatched performance with the NTE16004 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE16004 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 75 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
- Power - Max: 10 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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