NTE182
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 60V 10A TO127
$32.32
Available to order
Reference Price (USD)
1+
$32.32000
500+
$31.9968
1000+
$31.6736
1500+
$31.3504
2000+
$31.0272
2500+
$30.704
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTE182 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE182 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 90 W
- Frequency - Transition: 2MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AB, TO-127-3
- Supplier Device Package: TO-127
Related Products
NTE Electronics, Inc
MPSA44
Microchip Technology
2N3441
Fairchild Semiconductor
SS9013HBU
NTE Electronics, Inc
NTE227
Infineon Technologies
BCX54E6327
onsemi
SNSS30201MR6T1G
Taiwan Semiconductor Corporation
BC847A RFG
onsemi
BC546BTA
Fairchild Semiconductor
MMBTA64
Diodes Incorporated