NTE225
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 350V 1A TO39
$30.03
Available to order
Reference Price (USD)
1+
$30.03000
500+
$29.7297
1000+
$29.4294
1500+
$29.1291
2000+
$28.8288
2500+
$28.5285
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE225 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE225 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 10mA, 10V
- Power - Max: 10 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-39 W/flange
- Supplier Device Package: TO-39 W/flange
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