NTE2301
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 750V 5A TO218
$5.69
Available to order
Reference Price (USD)
1+
$5.69000
500+
$5.6331
1000+
$5.5762
1500+
$5.5193
2000+
$5.4624
2500+
$5.4055
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTE2301 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE2301 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 1.8A, 4.5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 100 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
Related Products
Renesas Electronics America Inc
2SD1376KV
Diotec Semiconductor
BC807-40R13
Nexperia USA Inc.
BCP68F
onsemi
KSA1156YS
NTE Electronics, Inc
2N6294
NXP USA Inc.
PMST6429,115
onsemi
2N4403RLRAG
Central Semiconductor Corp
PN3565 PBFREE
Diodes Incorporated
MMBTA64-7
Renesas Electronics America Inc