NTE2347
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 80V 5A TO39
$5.06
Available to order
Reference Price (USD)
1+
$5.06000
500+
$5.0094
1000+
$4.9588
1500+
$4.9082
2000+
$4.8576
2500+
$4.807
Exquisite packaging
Discount
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Upgrade your electronic designs with the NTE2347 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE2347 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Power - Max: 1 W
- Frequency - Transition: 50MHz
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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