NTE2557
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 200V 15A TO247
$9.70
Available to order
Reference Price (USD)
1+
$9.70000
500+
$9.603
1000+
$9.506
1500+
$9.409
2000+
$9.312
2500+
$9.215
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE2557 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE2557 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 10A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 10A, 3V
- Power - Max: 100 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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