NTE2946
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET-PWR N-CHAN ENHAN
$6.42
Available to order
Reference Price (USD)
1+
$6.42000
500+
$6.3558
1000+
$6.2916
1500+
$6.2274
2000+
$6.1632
2500+
$6.099
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2946 from NTE Electronics, Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to NTE Electronics, Inc's NTE2946 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
- FET Feature: Standard
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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