NTE313
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 30V 530MHZ 3SMD
$1.70
Available to order
Reference Price (USD)
1+
$1.70000
500+
$1.683
1000+
$1.666
1500+
$1.649
2000+
$1.632
2500+
$1.615
Exquisite packaging
Discount
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Discover the NTE313, a cutting-edge RF Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NTE313 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NTE Electronics, Inc for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 530MHz
- Noise Figure (dB Typ @ f): 2.5dB @ 200MHz
- Gain: 23dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SMD
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