NTE329
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 30V TO39
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE329 by NTE Electronics, Inc is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust NTE Electronics, Inc for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 2V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
Related Products
Infineon Technologies
BFR360FH6765XTSA1
onsemi
MMBTH11
NTE Electronics, Inc
NTE2688
Infineon Technologies
BF776H6327XTSA1
Infineon Technologies
BFR35APE6327HTSA1
onsemi
55GN01CA-TB-E
MACOM Technology Solutions
PH3135-5S
NXP USA Inc.
BFR94A,215
Renesas
NE85639-T1-R27-A
Renesas