NTH4LN019N65S3H
onsemi
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$22.59
Available to order
Reference Price (USD)
1+
$22.59000
500+
$22.3641
1000+
$22.1382
1500+
$21.9123
2000+
$21.6864
2500+
$21.4605
Exquisite packaging
Discount
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Enhance your electronic projects with the NTH4LN019N65S3H single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTH4LN019N65S3H for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19.3mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 14.3mA
- Gate Charge (Qg) (Max) @ Vgs: 282 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 15993 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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