NTHL020N090SC1
onsemi
onsemi
SICFET N-CH 900V 118A TO247-3
$31.67
Available to order
Reference Price (USD)
1+
$31.67000
500+
$31.3533
1000+
$31.0366
1500+
$30.7199
2000+
$30.4032
2500+
$30.0865
Exquisite packaging
Discount
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The NTHL020N090SC1 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NTHL020N090SC1 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
- Vgs (Max): +19V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
- FET Feature: -
- Power Dissipation (Max): 503W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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