NTHL025N065SC1
onsemi
onsemi
SIC MOS TO247-3L 650V
$22.08
Available to order
Reference Price (USD)
1+
$22.08000
500+
$21.8592
1000+
$21.6384
1500+
$21.4176
2000+
$21.1968
2500+
$20.976
Exquisite packaging
Discount
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The NTHL025N065SC1 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NTHL025N065SC1 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 348W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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