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NTHL045N065SC1

onsemi
NTHL045N065SC1 Preview
onsemi
SIC MOS TO247-3L 650V
$21.69
Available to order
Reference Price (USD)
1+
$21.69000
500+
$21.4731
1000+
$21.2562
1500+
$21.0393
2000+
$20.8224
2500+
$20.6055
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
  • Vgs (Max): +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
  • FET Feature: -
  • Power Dissipation (Max): 291W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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