NTLJS2103PTBG
onsemi
onsemi
MOSFET P-CH 12V 3.5A 6WDFN
$0.67
Available to order
Reference Price (USD)
3,000+
$0.24723
6,000+
$0.23018
15,000+
$0.22165
30,000+
$0.21700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTLJS2103PTBG from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NTLJS2103PTBG ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
Related Products
Alpha & Omega Semiconductor Inc.
AOH3254
Infineon Technologies
BTS114AE3045A
Alpha & Omega Semiconductor Inc.
AON6452
Vishay Siliconix
SQD50N06-09L_GE3
onsemi
FDMC8622
onsemi
NTD60N03
Nexperia USA Inc.
BSP122,115
Nexperia USA Inc.
PMCM4401UPEZ
Renesas Electronics America Inc
UPA2723T1A-E1-AZ
Infineon Technologies