NTMD6N03R2G
onsemi
onsemi
MOSFET 2N-CH 30V 6A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.34500
5,000+
$0.32121
12,500+
$0.30931
25,000+
$0.30282
Exquisite packaging
Discount
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The NTMD6N03R2G by onsemi is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the NTMD6N03R2G provides reliable operation under stringent conditions. onsemi's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
- Power - Max: 1.29W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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