NTMFD0D9N02P1E
onsemi
onsemi
IFET 25V 0.9 MOHM PQFN56MP
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Enhance your circuit designs with the NTMFD0D9N02P1E, a premium Transistors - FETs, MOSFETs - Arrays product from onsemi. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the NTMFD0D9N02P1E delivers consistent and reliable operation. onsemi's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V, 25V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
- Power - Max: 960mW (Ta), 1.04W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PQFN (5x6)
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