NTMFS024N06CT1G
onsemi
onsemi
MOSFET N-CH 60V 8A/25A 5DFN
$0.73
Available to order
Reference Price (USD)
1+
$0.72666
500+
$0.7193934
1000+
$0.7121268
1500+
$0.7048602
2000+
$0.6975936
2500+
$0.690327
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTMFS024N06CT1G by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the NTMFS024N06CT1G is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Nexperia USA Inc.
PMV280ENEAR
Infineon Technologies
IPB80P04P405ATMA1
Diodes Incorporated
ZXMN6A08GTA
Infineon Technologies
IRLML9301TRPBF
Fairchild Semiconductor
IRFW550ATM
Vishay Siliconix
SIHD6N62E-GE3
Diodes Incorporated
DMG3404L-13
Rohm Semiconductor
RF6E045AJTCR
Infineon Technologies
IRLMS1902TRPBF
Infineon Technologies