NTMFS3D2N10MDT1G
onsemi
onsemi
PTNG 100V LOW Q3.2MOHM N-FET, HE
$3.38
Available to order
Reference Price (USD)
1+
$3.38000
500+
$3.3462
1000+
$3.3124
1500+
$3.2786
2000+
$3.2448
2500+
$3.211
Exquisite packaging
Discount
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Meet the NTMFS3D2N10MDT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTMFS3D2N10MDT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 316µA
- Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 155W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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