NTMFS3D6N10MCLT1G
onsemi
onsemi
MOSFET N-CH 100V 19.5A/131A 5DFN
$2.91
Available to order
Reference Price (USD)
1+
$2.91000
500+
$2.8809
1000+
$2.8518
1500+
$2.8227
2000+
$2.7936
2500+
$2.7645
Exquisite packaging
Discount
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Upgrade your designs with the NTMFS3D6N10MCLT1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NTMFS3D6N10MCLT1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 131A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
- Vgs(th) (Max) @ Id: 3V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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