NTMFS6H818NT1G
onsemi
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
$3.99
Available to order
Reference Price (USD)
1,500+
$2.10549
3,000+
$2.00021
Exquisite packaging
Discount
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Meet the NTMFS6H818NT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTMFS6H818NT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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