NTMS4101PR2
onsemi
onsemi
MOSFET P-CH 20V 6.9A 8SOIC
$0.00
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Reference Price (USD)
2,500+
$0.40750
Exquisite packaging
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Enhance your electronic projects with the NTMS4101PR2 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTMS4101PR2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.38W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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