NTTFS6H888NTAG
onsemi
onsemi
T8 80V U8FL
$0.26
Available to order
Reference Price (USD)
1+
$0.26292
500+
$0.2602908
1000+
$0.2576616
1500+
$0.2550324
2000+
$0.2524032
2500+
$0.249774
Exquisite packaging
Discount
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Meet the NTTFS6H888NTAG by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTTFS6H888NTAG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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