NVB110N65S3F
onsemi
onsemi
MOSFET N-CH 650V 30A D2PAK-3
$4.28
Available to order
Reference Price (USD)
800+
$2.70796
Exquisite packaging
Discount
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The NVB110N65S3F from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVB110N65S3F offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK-3 (TO-263-3)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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