NVD3055L170T4G
onsemi
onsemi
N-CHANNEL POWER LOGIC LEVEL MOSF
$0.00
Available to order
Reference Price (USD)
2,500+
$0.23972
5,000+
$0.22426
12,500+
$0.20879
25,000+
$0.19796
Exquisite packaging
Discount
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Optimize your power electronics with the NVD3055L170T4G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NVD3055L170T4G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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