NVD5863NLT4G-VF01
onsemi
onsemi
MOSFET N-CH 60V 14.9A/82A DPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NVD5863NLT4G-VF01 by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
CPH3461-TL-H
STMicroelectronics
STF22NM60ND
STMicroelectronics
STD2NK70ZT4
Infineon Technologies
IRF6614TR1PBF
IXYS
IXFT26N50
Infineon Technologies
IRF3706SPBF
onsemi
NTB65N02RT4
Vishay Siliconix
IRF9Z34STRR
onsemi
NTB25P06
Rohm Semiconductor