NVF3055L108T3G
onsemi
onsemi
MOSFET N-CH 60V 3A SOT223
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NVF3055L108T3G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVF3055L108T3G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
IRLZ24NSTRLPBF
IXYS
IXFX80N60P3
Infineon Technologies
IPU80R3K3P7AKMA1
Nexperia USA Inc.
PSMN017-30BL,118
Infineon Technologies
IPLK70R2K0P7ATMA1
Texas Instruments
CSD19505KTT
Infineon Technologies
IRFS7734TRL7PP
PN Junction Semiconductor
P3M06040K4
Nexperia USA Inc.
BUK7M42-60EX
Rohm Semiconductor